| Row | Paper Title | Journal Title | Journal No. | Country | Colleagues |
|
1
| An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors | مجله مهندسي برق و الکترونيک | 5 | Iran | Kamyar Saghafi- Mohamad Kazem Moravej Farshi- Rahim Faez |
|
2
| Triple-Tunnel Junction Single Electron Transistor (TTJ-SET) | دانش فيزيک مدرن B | 10-00239 | USA | K. Saghafi, M.K. Moravvej Farshi, R. Faez. |
|
3
| Design of Quaternary Half Adder Using Hybrid SETMOS Cell | مکانيک و مواد کاربردي | 110-116 | Switzerland | Khadije Feizi |
|
4
| Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic | مکانيک و مواد کاربردي | 110-116 | Switzerland | Samane Ghorbanalipour, Rahim Faez |
|
5
| Study of Nenotube Diameter Effect on Carbon NanoTube Field Effect Transistors | فصلنامه صنايع الكترونيك | 3 | Electronics Industri | S. Mohammadian, R. Faez, |
|